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Milestones Home > About Rexchip > Milestones
 
Mar. Ground is broken for Rexchip's first 12" fabrication facility (Fab R1)
Nov. Rexchip Electronics Corp. is incorporated in the Republic of China
Dec. Elpida and PSC sign agreement to invest in total 450 billion NTD in the joint venture Rexchip and to establish central Taiwan as the largest 12" DRAM base in the world.
Feb. Construction of FAB R1 is complete
Apr. FAB R1 initial equipment is moved in
Jun. Pilot run of 70nm 1Gb DRAM begins
Jul. Ground is broken for Rexchip's second 12" fabrication facility (FAB R2)
Oct. Grand opening of FAB R1
Nov. FAB R1 input reaches 30,000 wafers per month
Jan. Pilot Run of 65nm 1G DDR2 begins
Feb. FAB R1 input reaches 70,000 wafers per month
May. Mass production of 1G DDR2 on 65nm process technology
Jul. Pilot run of 65nm 1G DDR3 begins
Jul. Mass production of 1G DDR3 on 65nm process technology
Nov. Pilot Run of 65nm-XS 1Gb DDR3 begins
Apr. Rexchip starts trading on the Emerging Market
Mass production of 1G DDR3 on 65nm-XS
Jun. Pilot run of 40nm 2G DDR3 begins